Strain Field Mapping of Dislocations in a Ge/Si Heterostructure
Author:
Publisher
Public Library of Science (PLoS)
Subject
Multidisciplinary
Reference26 articles.
1. A conventional theory of strain gradient crystal plasticity based on the Taylor dislocation model;H Wang;Int J Plasticity,2007
2. In situ observation of dislocation nucleation and escape in a submicrometre aluminium single crystal;HO Sang;Nature Mater,2009
3. Dislocation nucleation governed softening and maximum strength in nano-twinned metals;XY Li;Nature,2010
4. The structure and electrical properties of dislocations in semiconductors;PB Hirsch;J Microsc,1980
5. Device assessment of the electrical activity of threading dislocations in strained Ge epitaxial layers;E Simoen;Mat Sci Semicon Proc,2008
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