AlN for Mirror Passivation of High Power AlGaAs Single Quantum Well Separate Confinement Heterostructure Lasers-Reference-Cited by-同舟云学术

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AlN for Mirror Passivation of High Power AlGaAs Single Quantum Well Separate Confinement Heterostructure Lasers

Published:2001-01-01 Issue:3-4 Volume:8 Page:195-199
ISSN:1524-511X
Container-title:Journal of Wide Bandgap Materials
language:en
Short-container-title:Journal of Wide Bandgap Materials

Author:

Jagoda A.,Dobrzanski L.,Modonek M.,Wrobel S.

Publisher

SAGE Publications

Subject

Electrical and Electronic Engineering,Applied Microbiology and Biotechnology,Electronic, Optical and Magnetic Materials,Biotechnology

Cited by 3 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Oxygen Nitrogen Mixture Effect on Aluminum Nitride Synthesis by Reactive Ion Plasma Deposition;Semiconductors;2018-02

2. Influence of the mirror coating material on the catastrophic optical damage of semiconductor SQW-SCH;SPIE Proceedings;2003-10-07

3. Selective deposition of GaN layers for semiconductor lasers technology;SPIE Proceedings;2003-10-07

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