Phenomenological model of nanocrystalline silicon film formation by plasma-enhanced chemical vapor deposition-Reference-Cited by-同舟云学术

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Phenomenological model of nanocrystalline silicon film formation by plasma-enhanced chemical vapor deposition

Published:2009-08 Issue:4 Volume:45 Page:322-327
ISSN:8756-6990
Container-title:Optoelectronics, Instrumentation and Data Processing
language:en
Short-container-title:Optoelectron.Instrument.Proc.

Author:

Novikov P. L.,Le Donne A.,Cereda S.,Miglio L.,Pizzini S.,Binetti S.,Rondanini M.,Cavallotti C.,Chrastina D.,Moiseev T.,von Känel H.,Isella G.,Montalenti F.

Publisher

Allerton Press

Subject

Electrical and Electronic Engineering,Condensed Matter Physics,Instrumentation

Link

http://link.springer.com/content/pdf/10.3103/S8756699009040062.pdf

Reference16 articles.

1. A. Matsuda, “Thin-Film Silicon—Growth Process and Solar Cell Application,” Jpn. J. Appl. Phys. 43,Part 1, 7909 (2004).

2. D. Maroudas, “Modeling of Radical-Surface Interactions in the Plasma-Enhanced Chemical Vapor Deposition of Silicon Thin Films,” Adv. Chem. Eng. 28, 251 (2001).

3. C. Cavallotti, M. D. Di Stanislao, and S. Carrá, “Interplay of Physical and Chemical Aspects in the PECVD and Etching of Thin Solid Films,” Prog. Cryst. Growth Charact. Mater. 48, 123 (2004).

4. A. Shah, P. Torres, R. Tscharner, et al., “Photovoltaic Technology: The Case for Thin-Film Solar Cells,” Science 285(5428), 692 (1999).

5. S. Cereda, M. Ceriotti, F. Montalenti, et al., “Quantitative Estimate of H Abstraction by Thermal SiH3 on Hydrogenated Si(001)(2 × 1),” Phys. Rev. B 75(23), 235311 (2007).

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