Formation of type-II InAs/GaSb strained short-period superlattices for IR photodetectors by molecular beam epitaxy-Reference-Cited by-同舟云学术

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Formation of type-II InAs/GaSb strained short-period superlattices for IR photodetectors by molecular beam epitaxy

Published:2011-10 Issue:5 Volume:47 Page:452-458
ISSN:8756-6990
Container-title:Optoelectronics, Instrumentation and Data Processing
language:en
Short-container-title:Optoelectron.Instrument.Proc.

Author:

Emel’yanov E. A.,Feklin D. F.,Vasev A. V.,Putyato M. A.,Semyagin B. R.,Vasilenko A. P.,Pchelyakov O. P.,Preobrazhenskii V. V.

Publisher

Allerton Press

Subject

Electrical and Electronic Engineering,Condensed Matter Physics,Instrumentation

Link

http://link.springer.com/content/pdf/10.3103/S8756699011050256.pdf

Reference13 articles.

1. E. Plis, A. Khoshakhlagh, S. Myers, et al., “Molecular Beam Epitaxy Growth and Characterization of Type-II InAs/GaSb Strained Layer Superlattices for Long-Wave Infrared Detection,” J. Vac. Sci. Technol. B. 28(3), C3G13–C3G18 (2010).

2. R. Rehm, M. Walther, J. Schmitz, et al., “Status of Mid-Infrared Superlattice Technology in Germany,” in Proc. SPIE 7222, 72220T-1–72220T-13 (2009).

3. Q. Xie, J. E. van Nostrand, J. L. Brown, and C. E. Stutz, “Arsenic for Antimony Exchange on GaSb, Its Impacts on Surface Morphology, and Interface Structure,” J. Appl. Phys. 86(1), 329–337 (1999).

4. M. Losurdo, P. Capezzuto, G. Bruno, et al., “Fundamental Reactions Controlling Anion Exchange during Mixed Anion Heterojunction Formation: Chemistry of As-for-Sb and Sb-for-As Exchange Reactions,” J. Appl. Phys. 100, 013531 (2006).

5. D. H. Chow, R. H. Miles, and A. T. Hunter, “Effects of Interface Stoichiometry on the Structural and Electronic Properties of Ga1−x InxSb/InAs Superlattices,” J. Vac. Sci. Technol. B 10(2), 888–891 (1992).

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1. Optimization of Growth Parameters for Enhancing Crystal Quality of Inas/Gasb Type Ii Superlattice Grown Through Molecular Beam Epitaxy;2024

2. Photoluminescence Spectra of InAs/GaInSb/InAs Quantum Wells in the Mid-Infrared Region;Semiconductors;2020-09

3. The Growth of InAsxSb1 –x Solid Solutions on Misoriented GaAs(001) Substrates by Molecular-Beam Epitaxy;Semiconductors;2019-04

4. Proximity-induced superconductivity within the InAs/GaSb edge conducting state;Physical Review B;2017-12-15

5. Magnetoabsorption of Dirac Fermions in InAs/GaSb/InAs “Three-Layer” Gapless Quantum Wells;JETP Letters;2017-12

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