Ellipsometric study on the formation of nanocomposites by annealing SiO x films in oxygen-containing media

Author:

Sopinskii N. V.,Russu A. V.

Publisher

Allerton Press

Subject

Electrical and Electronic Engineering,Condensed Matter Physics,Instrumentation

Reference20 articles.

1. M. Sopinskyy and V. Khomchenko, “Electroluminescence in SiO x Films and SiO x Film-Based Systems,” Curr. Opin. Solid State Mater. Sci. 7 (2), 97–109 (2003).

2. Z. Yuan, A. Anopchenko, and L. Pavesi, Innovative Quantum Effects in Silicon for Photovoltaic Applications. Advanced Silicon Materials for Photovoltaic Applications, Ed. by S. Pizzini (Wiley & Sons, Chichester, 2012).

3. D. Nesheva, N. Nedev, M. Curiel, et al., Silicon Oxide Films Containing Amorphous or Crystalline Silicon Nanodots for Device Applications. Quantum Dots — A Variety of New Applications, Ed. by Dr. Ameenah Al- Ahmadi (InTech, Rijeka, 2012), Ch. 9, pp. 183–206, http://cdn.intechopen.com/pdfs-wm/34819.pdf.

4. L. N. Dinh, L. L. Chase, M. Balooch, et al., “Optical Properties of Passivated Si Nanocrystals and SiO x Nanostructures,” Phys. Rev. B 54 (7), 5029–5037 (1996).

5. X. Y. Chen, Y. F. Lu, L. J. Tang, et al., “Annealing and Oxidation of Silicon Oxide Films Prepared by Plasma- Enhanced Chemical Vapor Deposition,” J. Appl. Phys. 97 (1), 014913 (2005).

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