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Molecular Beam Epitaxy of Strained Nanoheterostructures Based on Si, Ge, and Sn

  • Published:2020-09 Issue:5 Volume:56 Page:470-477
  • ISSN:8756-6990
  • Container-title:Optoelectronics, Instrumentation and Data Processing
  • language:en
  • Short-container-title:Optoelectron.Instrument.Proc.

Author:

Deryabin A. S.,Dolbak A. E.,Esin M. Yu.,Mashanov V. I.,Nikiforov A. I.,Pchelyakov O. P.,Sokolov L. V.,Timofeev V. A.

Publisher

Allerton Press

Subject

Electrical and Electronic Engineering,Condensed Matter Physics,Instrumentation

Reference23 articles.

1. M. R. Bauer, J. Tolle, C. Bungay, A. V. G. Chizmeshya, D. J. Smith, J. Menéndez, and J. Kouvetakis, ‘‘Tunable band structure in diamond–cubic tin–germanium alloys grown on silicon substrates,’’ Solid State Commun. 127, 355–359 (2003). https://doi.org/10.1016/S0038-1098(03)00446-0

2. S. Wirths, R. Geiger, N. von den Driesch, G. Mussler, T. Stoica, S. Mantl, Z. Ikonic, M. Luysberg, S. Chiussi, J. M. Hartmann, H. Sigg, J. Faist, D. Buca, and D. Grutzmacher, ‘‘Lasing in direct-bandgap GeSn alloy grown on Si,’’ Nature Photon. 9, 88–92 (2015). https://doi.org/10.1038/nphoton.2014.321

3. A. Mosleh, M. A. Alher, L. C. Cousar, W. Du, S. A. Ghetmiri, Th. Pham, J. M. Grant, G. Sun, R. A. Soref, B. Li, H. A. Naseem, and Sh.-Q. Yu, ‘‘Direct growth of Ge$${}_{1-x}$$Sn$${}_{x}$$ films on Si using a cold-wall ultra-high vacuum chemical-vapor-deposition system,’’ Front. Mater. 2, 30 (2015). https://doi.org/10.3389/fmats.2015.00030

4. R. Chen, S. Gupta, Y.-Ch. Huang, Y. Huo, Ch. W. Rudy, E. Sanchez, Y. Kim, Th. I. Kamins, K. C. Saraswat, and J. S. Harris, ‘‘Demonstration of a Ge/GeSn/Ge quantum-well microdisk resonator on silicon: enabling high-quality Ge (Sn) materials for micro-and nanophotonics,’’ Nano Lett. 14, 37–43 (2014). https://doi.org/10.1021/nl402815v

5. S. Gupta, B. Magyari-Köpe, Yo. Nishi, and K. C. Saraswat, ‘‘Achieving direct band gap in germanium through integration of Sn alloying and external strain,’’ J. Appl. Phys. 113, 073707 (2013). https://doi.org/10.1063/1.4792649

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