Effect of post-implantation annealing on the current-voltage characteristics of IR photodiodes based on p-HgCdTe-Reference-Cited by-同舟云学术

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Effect of post-implantation annealing on the current-voltage characteristics of IR photodiodes based on p-HgCdTe

Published:2009-08 Issue:4 Volume:45 Page:308-315
ISSN:8756-6990
Container-title:Optoelectronics, Instrumentation and Data Processing
language:en
Short-container-title:Optoelectron.Instrument.Proc.

Author:

Vishnyakov A. V.,Varavin V. S.,Garifullin M. O.,Predein A. V.,Remesnik V. G.,Sabinina I. V.,Sidorov G. Yu.

Publisher

Allerton Press

Subject

Electrical and Electronic Engineering,Condensed Matter Physics,Instrumentation

Link

http://link.springer.com/content/pdf/10.3103/S8756699009040049.pdf

Reference17 articles.

1. A. Ajisawa and N. Oda, “Improvement in HgCdTe Diode Characteristics by Low Temperature Post-Implantation Annealing,” J. Electron. Mater. 24(9), 1105 (1995).

2. S. N. Bae, Y. N. Kim, K. Kim, et al., “Improvement in HgCdTe Diode Characteristics by Flip-Chip Bonded Annealing,” Proc. SPIE 3061, 104 (1997).

3. G. Destefanis and J. P. Chamonal, “Large Improvement in HgCdTe Photovoltaic Detector Performances at LETI,” J. Electron. Mater. 22(8), 1027 (1993).

4. A. Mestechkin, D. L. Lee, B. T. Cunningham, and B. D. MacLeod, “Bake Stability of Long-Wavelength Infrared HgCdTe Photodiodes,” J. Electron. Mater. 24(9), 1183 (1995).

5. T. Nguyen, C. A. Musca, J. M. Dell, et al., “The Effects of Vacuum Baking on the I-V Characteristics of LWIR HgCdTe Photodiodes,” Proc. SPIE 5274, 433 (2004).

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Analysis of charge-carrier diffusion in the photosensing films of HgCdTe infrared focal plane array photodetectors;Journal of Applied Physics;2015-09-28

2. Determination of charge-carrier diffusion length in the photosensing layer of HgCdTe n-on-p photovoltaic infrared focal plane array detectors;Applied Physics Letters;2014-03-03

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