Structural state of Ge/Si heterosystems with (001), (111), and (7 7 10) interfaces

Author:

Trukhanov E. M.,Loshkarev I. D.,Romanyuk K. N.,Gutakovskii A. K.,Ilin A. S.,Kolesnikov A. V.

Publisher

Allerton Press

Subject

General Physics and Astronomy

Reference7 articles.

1. LeGous, F.K., Horn-von Hoegen, M., Copel, M., and Tromp, R.M., Phys. Rev. B, 1991, vol. 44, p. 12894.

2. Volyntsev, A.B., in Nasledstvennaya mekhanika dislokatsionnykh ansamblei (komp’yuternye modeli i eksperiment) (Genetic Mechanics of Dislocation Ensembles (Computer Models and Experiment)), Irkutsk: Izd. Irkutskogo univ., 1990.

3. Pintus, S.M., Latyshev, A.V., Aseev, A.L., and Karasev, V.Yu., Poverkhn., 1984, vol. 8, p. 60.

4. Teys, S.A., Romanyuk, K.N., Zhachuk, R.A., and Olshanesky, B.Z., Surf. Sci., 2006, vol. 600, p. 4878.

5. Hirth, J.P. and Lothe, J., Theory of Dislocations, New York: McGraw-Hill, 1968; Moscow: Atomizdat, 1972.

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1. Long-range stresses generated by misfit dislocations in epitaxial films;Russian Microelectronics;2015-11-21

2. Analysis of the dislocation structure at the Ge/Si(111) heterointerface;Journal of Surface Investigation. X-ray, Synchrotron and Neutron Techniques;2014-07

3. Effect of long-range stresses on the structure of semiconductor heterosystems;Journal of Surface Investigation. X-ray, Synchrotron and Neutron Techniques;2014-05

4. Optimal and nonoptimal misfit stress relaxation in a semiconductor heterosystem;Bulletin of the Russian Academy of Sciences: Physics;2014-04

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