1. Osip’yan, Yu.A. and Petrenko, V.F., Zh. Eksp. Teor. Fiz., 1972, vol. 63, no.5, p. 1735.
2. Novikov, N.N., Ukr. Fiz. Zh., 1972, vol. 17, no. 5, p. 724.
3. Gerasimov, A.B., Chiradze, G.D., and Kutivadze, N.G., Fiz. Tekh. Poluprovodn. (St. Petersburg), 2001, vol. 35, no. 1, p. 70 [Semiconductors (Engl. Transl.), vol. 35, no. 1, p. 72].
4. Tetelbaum, D.I., Trofimov, A.A., Azov, A.Yu., et al., Pis’ma Zh. Tekh. Fiz., 1998, vol. 24, no. 23, p. 9.
5. Tetelbaum, D.I. Azov, A.Yu., Kuril’chik, E.V., et al., Vacuum, 2003, vol. 70, nos. 2–3, p. 169.