Laser Diodes (850 nm) Based on an Asymmetric AlGaAs/GaAs Heterostructure with a Bulk Active Region for Generating High-Power Subnanosecond Optical Pulses
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Published:2023-10
Issue:S5
Volume:50
Page:S513-S519
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ISSN:1068-3356
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Container-title:Bulletin of the Lebedev Physics Institute
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language:en
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Short-container-title:Bull. Lebedev Phys. Inst.
Author:
Podoskin A. A.,Shushkanov I. V.,Shamakhov V. V.,Rizaev A. E.,Kondratov M. I.,Klimov A. A.,Zazulin S. V.,Slipchenko S. O.,Pikhtin N. A.
Subject
Electronic, Optical and Magnetic Materials
Reference25 articles.
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