Properties of Porous Silicon Films Formed by Metal-Assisted Chemical Etching Using Various Oxidants
Author:
Publisher
Allerton Press
Subject
Electronic, Optical and Magnetic Materials
Link
https://link.springer.com/content/pdf/10.3103/S1068335621120058.pdf
Reference12 articles.
1. Li, J.Y., Hung, C.H., and Chen, C.Y., Hybrid black silicon solar cells textured with the interplay of copper-induced galvanic displacement, Sci. Rep., 2017, vol. 7, no. 1, pp. 1–10. https://doi.org/10.1038/s41598-017-17516-6
2. Madhavi, K., Mohan, R.G., Habibuddin, S., and Padmasuvarna, R., Study of the properties of the porous silicon synthesized by Ag assisted electrolysis etching, Int. Lett. Chem. Phys. Astron., 2016, vol. 71, pp. 40–48. https://doi.org/10.18052/www.scipress.com/ILCPA.71.40
3. Korotchenkov, G., Porous Silicon: From Formation to Application, London: CRC Press, 2016.
4. Yang, M., Huang, D., and Hao, P., Study of the Raman peak shift and the linewidth of light-emitting porous silicon, J. Appl. Phys., 1994, vol. 75, no. 1, pp. 651–653. https://doi.org/10.1063/1.355808
5. Qiu, L., Wei, Q., Haoyun, T., Jiangang, G., and Yilan, K., Micro-Raman spectroscopy stress measurement method for porous silicon film, Opt. Lasers Eng., 2010, no. 48, pp. 1119–1125. https://doi.org/10.1016/j.optlaseng.2009.12.020
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