Investigation of the Fano Resonance in the Cross Section of a Semiconductor Structure with a p–n Junction Formed in a Porous Silicon Film
Author:
Publisher
Allerton Press
Subject
Electronic, Optical and Magnetic Materials
Link
https://link.springer.com/content/pdf/10.3103/S1068335623070096.pdf
Reference8 articles.
1. Melnik, N.N., Tregulov, V.V., Skoptsova, G.N., Ivanov, A.I., and Kostsov, D.S., Observation of the Fano resonance in a semiconductor structure with a p-n junction formed in a porous silicon film, Bull. Lebedev Phys. Inst., 2023, vol. 50, pp. 52–54. https://doi.org/10.3103/S1068335623020057
2. Limonov, M.F., Fano resonance for applications, Adv. Opt. Photon., 2021, vol. 13, no. 3, pp. 703–771. https://doi.org/10.1364/AOP.420731
3. Yu, Yi, Heuck, M., Hu, Hao, at al., Fano resonance control in a photonic crystal structure and its application to ultrafast switching, Appl. Phys. Lett., 2014, vol. 105, no. 6, p. 061117. https://doi.org/10.1063/1.4893451
4. Dzhafarov, T. and Bayramov, A., Porous Silicon and Solar Cells: Handbook of Porous Silicon, Canham, L., Ed., Springer, 2018, pp. 1479–1492. https://doi.org/10.1007/978-3-319-71381-6_95
5. Sze, S.M., Physics of Semiconductor Devices, New York: Wiley, 1981.
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