High-Power Laser Diodes Based on InGaAs(P)/Al(In)GaAs(P)/GaAs Heterostructures with Low Internal Optical Loss-Reference-Cited by-同舟云学术

High-Power Laser Diodes Based on InGaAs(P)/Al(In)GaAs(P)/GaAs Heterostructures with Low Internal Optical Loss

Published:2023-09 Issue:S4 Volume:50 Page:S494-S512
ISSN:1068-3356
Container-title:Bulletin of the Lebedev Physics Institute
language:en
Short-container-title:Bull. Lebedev Phys. Inst.

Author:

Slipchenko S. O.,Veselov D. A.,Zolotarev V. V.,Lyutetskii A. V.,Podoskin A. A.,Sokolova Z. N.,Shamakhov V. V.,Shashkin I. S.,Kop’ev P. S.,Pikhtin N. A.

Publisher

Allerton Press

Subject

Electronic, Optical and Magnetic Materials

Link

https://link.springer.com/content/pdf/10.3103/S1068335623160108.pdf

Reference126 articles.

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3. Basov, N.G., Krokhin, O.N., and Popov, Yu.M., Zh. Eksp. Teor. Fiz., 1961, vol. 40, p. 1879.

4. Bagaev, V.C., Basov, N.G., Vul, B.M., Kopylovsky, B.D., Krokhin, O.N., Popov, Yu.M., Markin, E.P., Khvoshev, A.N., and Shotov, A.P., Quantum Electron., Proc. Third Int. Cong., United States: Dunod, 1964, p. 1891.

5. Alferov, Zh.I. and Kazarinov, R.F., Author’s Certificate No. 181737, 1963.

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