1. Ismoilov, Kh.Kh., Abdugafurov, A.M., Mirsagatov, Sh.A., and Leiderman, A.Yu., Fiz. Tverd. Tela, 2008, vol. 50, no. 11, pp. 1953–1958 [Phys. Solid State (Engl. Transl.), 2008, vol. 50, no. 11, p. 2033].
2. Saidov, A.S., Leiderman, A.Yu., Usmonov, Sh.N., and Kholikov, K.T., Fiz. Tekhn. Poluprododn., 2009, vol. 43, no. 4, pp. 436–439 [Semicond. (Engl. Transl.), 2009, vol. 43, no. 4, p. 416].
3. Usmonov, Sh.N., Saidov, A.S., Leiderman, A.Yu., et al., Fiz. Tekhn. Poluprododn., 2009, vol. 43, no. 8, pp. 473–476 [Semicond. (Engl. Transl.), 2009, vol. 43, no. 8, p. 1092].
4. Leiderman, A.Yu., Phys. Stat. Sol. (a), 1979, vol. 55, no. 2, pp. 661–671.
5. Karageorgii-Alkalaev, P.M. and Leiderman, A.Yu., Fotochuvstvitel’nost’ poluprovonikovykh struktur s glubokimi primesyami (Photo-Sensitivity of Semiconductor Structures with Deep Impurities), Tashkent: Fan, 1981.