Effect of negative magnetoresistance in a transverse magnetic field in quantum Bi wires-Reference-Cited by-同舟云学术

Effect of negative magnetoresistance in a transverse magnetic field in quantum Bi wires

Published:2015-01 Issue:1 Volume:51 Page:46-53
ISSN:1068-3755
Container-title:Surface Engineering and Applied Electrochemistry
language:en
Short-container-title:Surf. Engin. Appl.Electrochem.

Author:

Nikolaeva A. A.,Konopko L. A.,Tsurkan A. K.,Sinyavskii E. P.,Botnari O. V.

Publisher

Allerton Press

Subject

Industrial and Manufacturing Engineering,Surfaces, Coatings and Films,Surfaces and Interfaces

Link

http://link.springer.com/content/pdf/10.3103/S106837551501010X.pdf

Reference30 articles.

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3. Ogrin, Y.F., Lutsky, V.N., and Yelinson, M.I., About observation of quantum size effects in thin Bi films, Sov. Phys. JETP Lett., 1966, vol. 3, p. 71.

4. Komnik, Yu.F. and Andrievskii, V.V., Kinetic properties of bismuth films, Fiz. Nizk. Temp., 1975, vol. 1, pp. 104–109.

5. Rogacheva, E.I., Grigorov, S.N., Nashchekina, O.N., Lyubchenko, S., and Dresselhaus, M.S., Quantum size effects in n-type bismuth thin films, Appl. Phys. Lett., 2003, vol. 82, p. 16.

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