1. Donika, F.G., Radautsan, S.I., Semiletov, S.A., Kiosse, G.A., and Mustya, I.B., Crystallographic Structure of a Two-Packet Polytype ZnIn2S4(II), Kristallografiya, 1972, vol. 17, no. 13, pp. 663–667.
2. Donika, F.G., Zhitar, V. F., and Radautsan, S.I., Poluprovodniki v sisteme ZnS-In 2S3 (Semiconductors in the ZnS-In2S3 System), Chisinau: Stiinta, 1980.
3. Arama, E., Ababii, I., Zhitar, V., and Shemyakova, T., UV-Detectors Based on ZnxIn2S3 + x and Related Compounds, Proc. Int. Semicond. Conf. CAS 2003, Sinaia, Romania, vol. 1, 2003, pp. 147–151.
4. Tsiuleanu, I., Simashkevich, A., and Sprincean, A., Formation of Double Electric Layer at ZnmIn2S m + 3 (m = 1, 2, 3) − H2O (S2−/S 2 2− ) Interface, Proc. Int. Semicond. Conf. CAS 2001, Sinaia, Romania, vol. 2, 2001, pp. 315–319.
5. Zhitar, V., Pavlenko, V., Arama, E., and Shemyakova, T., Recombination Properties of ZnIn2S4:Cu Single Crystals, Proc. Int. Semicond. Conf. CAS 2008, Sinaia, Romania, vol. 2, 2008, pp. 241–244.