1. T. Li et al. (Editors), III–V Semiconductors: Integration with Silicon-Based Microelectronics (CRC Press, Boca Raton, 2011).
2. S. A. Kukushkin and A. V. Osipov, “New Method for Growing Silicon Carbide on Silicon by Solid-Phase Epitaxy: Model and Experiment,” Fiz. Tverd. Tela 50(7), 1188–1195 (2008) [Phys. Solid State (Engl. Transl.) 50 (7), 1238–1245 (2008)].
3. S. A. Kukushkin, A. V. Osipov, N. A. Feoktistov, “Method for Manufacturing an Article Containing a Silicon Substrate with Carbide Film on Its Surface,” RF Patent No. 2 363 067 (January 22, 2008; Published on July 27, 2009), Bulletin No. 21.
4. L. M. Sorokin, A. K. Kalmykov, V. N. Bessolov, et al., “Structural Characterization of GaN Epilayers on Silicon: Effect of Buffer Layers,” Pis’ma Zh. Teoret. Fiz. 37(7), 72–79 (2011) [Tech. Phys. Lett. (Engl. Transl.) 37 (4), 326–329 (2011)].
5. J. D. Eshelby, Continual Theory of Defects, in Continual Theory of Dislocations (Inostr. Liter., Moscow, 1963), pp. 11–102 [in Russian].