Mathematical modeling of the dependences of the monochromatic cathodoluminescence intensity on the electron beam energy for a three-layer semiconductor structure-Reference-Cited by-同舟云学术

Mathematical modeling of the dependences of the monochromatic cathodoluminescence intensity on the electron beam energy for a three-layer semiconductor structure

Published:2008-11 Issue:11 Volume:72 Page:1451-1455
ISSN:1062-8738
Container-title:Bulletin of the Russian Academy of Sciences: Physics
language:en
Short-container-title:Bull. Russ. Acad. Sci. Phys.

Author:

Snopova M. G.,Mikheev N. N.,Petrov V. I.,Stepovich M. A.

Publisher

Allerton Press

Subject

General Physics and Astronomy

Link

http://link.springer.com/content/pdf/10.3103/S1062873808110014.pdf

Reference10 articles.

1. Petrov, V.I., Usp. Fiz. Nauk, 1996, vol. 166, no. 8, p. 859.

2. Breese, J.F., Mater. Sci. Eng. B, 1996, vol. 24, no. 1, p. 199.

3. Snopova, M.G., Khokhlov, A.G., Mikheev, N.N., and Stepovich, M.A., Prikl. Fiz., 2007, no. 1, p. 55.

4. Belov, A.A., Petrov, V.I., and Stepovich, M.A., Izv. Ross. Akad. Nauk, Ser. Fiz., 2002, vol. 66, no. 9, p. 1317.

5. Snopova, M.G., Burylova, I.V., Petrov, V.I., and Stepovich, M.A., Poverkhnost’: Rentgen. Neitron. Sinkhrotron. Issled., 2007, no. 7, p. 1.

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