Relaxation in the photoelectric and photovoltaic responses of thin-film Pb(Zr0.25, Ti0.75)O3 ferroelectric-Reference-Cited by-同舟云学术

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Relaxation in the photoelectric and photovoltaic responses of thin-film Pb(Zr0.25, Ti0.75)O3 ferroelectric

Published:2011-10 Issue:10 Volume:75 Page:1403-1405
ISSN:1062-8738
Container-title:Bulletin of the Russian Academy of Sciences: Physics
language:en
Short-container-title:Bull. Russ. Acad. Sci. Phys.

Author:

Shilov M. V.,Bogomolov A. A.,Solnyshkin A. V.

Publisher

Allerton Press

Subject

General Physics and Astronomy

Link

http://link.springer.com/content/pdf/10.3103/S1062873811100297.pdf

Reference12 articles.

1. Fridkin, V.M., Segnetoelektriki-poluprovodniki (Ferroelectrics-Semiconductors), Moscow: Nauka, 1976.

2. Lee, J., Esayan, S., Safari, A., and Ramesh, R., Integr. Ferroelectr., 1995, vol. 6, nos. 1–4, p. 289.

3. Dubovik, E., Fridkin, V., and Dimos, D., Integr. Ferroelectr., 1995, vol. 9, p. 285.

4. Yarmarkin, V.K., Gol’tsman, B.M., Kazanin, M.M., and Lemanov, V.V., Fiz. Tverd. Tela, 2000, vol. 42, p. 511.

5. Yang, Y.S., Lee, S.J., and Yi, S., Appl. Phys. Lett., 2000, vol. 76, p. 774.

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Pyroelectric Properties and Local Piezoelectric Response of Lithium Niobate Thin Films;physica status solidi (a);2017-12-21

2. Conductivity and barrier effects in thin-film PZT-based heterostructures, depending on the conditions of synthesis;Bulletin of the Russian Academy of Sciences: Physics;2013-08

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