1. Wang, C., Chen, Yu., Wang, X., et al., Mater. Sci. Semicond. Process., 2013, vol. 16, no. 1, p. 77.
2. Gich, M., Roig, A., Frontera, C., et al., J. Appl. Phys., 2005, vol. 98, no. 4, p. 044307.
3. Dmitriev, A.I., Nauchno-Tekhn.
Vestn. St. Petersb. Gos. Univ. ITMO, 2017, vol. 17, no. 5, p. 805.
4. Duque, J.G.S., Souza, E.A., Meneses, C., et al., J. Phys. B, 2007, vol. 398, no. 2, p. 287.
5. Khlyustova, A.V., Shipko, M.N., Sirotkin, N.A., et al., Bull. Russ. Acad. Sci.: Phys., 2022, vol. 86, no. 5, p. 509.