Injection of holes and their localization in defect states at the interface between an electrochromically sensitive single crystal and an amorphous thin film of a complex tungsten oxide-Reference-Cited by-同舟云学术

Injection of holes and their localization in defect states at the interface between an electrochromically sensitive single crystal and an amorphous thin film of a complex tungsten oxide

Published:2007-08 Issue:8 Volume:71 Page:1164-1167
ISSN:1062-8738
Container-title:Bulletin of the Russian Academy of Sciences: Physics
language:en
Short-container-title:Bull. Russ. Acad. Sci. Phys.

Author:

Khubolov B. M.,Podlinov V. P.

Publisher

Allerton Press

Subject

General Physics and Astronomy

Link

http://link.springer.com/content/pdf/10.3103/S1062873807080333.pdf

Reference12 articles.

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2. Messmer, R., Semiempirical Methods of Electronic Structure Calculations, Segal, G.A., Ed., New York: Plenum, 1977. Translated under the title Poluempiricheskie metody rascheta elektronnoi struktury, Moscow: Mir, 1980, vol. 2.

3. Khubolov, B.M. and Podlinov, V.P., Poverkhnost, 2004, no. 9, p. 86.

4. Khubolov, B.M., Podlinov, V.P., and Khokonova, Zh. Kh., Poverkhnost, 2004, no. 7, p. 86.

5. Prusov, V.A., Filyaev, A.T., and Tarasov, A.Ya., Primenenie metoda estansa v tverdykh elektrolitakh (Application of the Estance Method in Solid Electrolutes), Available from VINITI, 1986, Moscow, no. 1928-B 86.

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