Device for measuring doping impurities of Groups III and V in high-purity silicon by long-wavelength spectroscopy-Reference-Cited by-同舟云学术

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Device for measuring doping impurities of Groups III and V in high-purity silicon by long-wavelength spectroscopy

Published:2013-12 Issue:12 Volume:77 Page:1420-1424
ISSN:1062-8738
Container-title:Bulletin of the Russian Academy of Sciences: Physics
language:en
Short-container-title:Bull. Russ. Acad. Sci. Phys.

Author:

Boldyrev K. N.,Boldyrev N. Yu.,Kirillin R. V.

Publisher

Allerton Press

Subject

General Physics and Astronomy

Link

http://link.springer.com/content/pdf/10.3103/S1062873813130042.pdf

Reference11 articles.

1. Nepomnyashchikh, A.I., Nauka Priangar’ya, 2012, no. 3.

2. Emel’yanov, A., Ekol. Sist., 2007, no. 9.

3. Leblanc, D. and Putyera, K., Trans. Nonferr. Met. Soc. China, 2011, vol. 21, p. 1172.

4. Karabinov, R., Metallurg. Byull., 2004, no. 12, p. 16.

5. Naumov, A.V., Izv. Vyssh. Uchebn. Zaved. Mater. Elektron. Tekhn., 2009, no. 2(46), p. 16.

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