Degradation of high-power semiconductor quantum-well lasers
Author:
Publisher
Allerton Press
Subject
General Physics and Astronomy
Link
http://link.springer.com/content/pdf/10.3103/S1541308X13040092.pdf
Reference8 articles.
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2. Z.N. Sokolova, I.S. Tarasov, and L.V. Asryan, “Capture of Charge Carriers and Output Power of a Quantum Well Laser,” Semiconductors. 45(11), 1494 (2011).
3. D.R. Miftakhutdinov, A.P. Bogatov, and A.E. Drakin, “Catastrophic Optical Degradation of the Output Facet of High-Power Single-Transverse-Mode Diode Lasers. 1. Physical Model,” Quantum Electron. 40(7), 583 (2010).
4. I.V. Akimova, A.P. Bogatov, A.E. Drakin, and V.P. Konyaev, “Dynamics of the Optical Damage of Output Mirrors of Ridge Semiconductor Lasers Based on Strained Quantum-Well Heterostructures,” Quantum Electron. 28(7), 629 (1998).
5. Z.N. Sokolova, I.S. Tarasov, and L.V. Asryan, “Effect of the Number of Quantum Wells in the Active Region on the Linearity of the Light-Current Characteristic of a Semiconductor Laser,” Semicond. 46(8), 1044 (2012).
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