Interaction between dislocations density and carrier concentration of gallium nitride layers
Author:
Publisher
Allerton Press
Subject
Inorganic Chemistry,General Materials Science
Link
http://link.springer.com/content/pdf/10.3103/S1063457607030124.pdf
Reference12 articles.
1. Northrup, J.E., Screw Dislocations in GaN: the Ga-Filled Core Model, Appl. Phys. Lett., 2001, vol. 78, no. 16, pp. 2288–2290.
2. Hino, T., Tomiya, S., Miyajima, T., et al., Characterization of Threading Dislocations in GaN Epitaxial Layers, Appl. Phys. Lett., 2000, vol. 76, pp. 3421–3423.
3. Arslan, L. and Browing, N.D., Intrinsic Electronic Structure of Threading Dislocations in GaN, Phys. Rev. B, 2002, vol. 65, pp. 075310(1)–075310(10).
4. Blumenau, A.T., Elsner, J., Jones, R., et al., Dislocations in Hexagonal and Cubic GaN, J. Phys. Condens. Matter., 2000, vol. 12, pp. 10223–10234.
5. Götz, W., Johnson, N.M., Chen, C., et al., Activation Energies of Si Donors in GaN, Appl. Phys. Lett., 1996, vol. 68, pp. 3144–3146.
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