Vis-NIR characteristics of amorphous germanium films and electrical properties of a-Ge/p-Si heterostructures obtained by pulsed-laser deposition method-Reference-Cited by-同舟云学术

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Vis-NIR characteristics of amorphous germanium films and electrical properties of a-Ge/p-Si heterostructures obtained by pulsed-laser deposition method

Published:2012-05-05 Issue:3 Volume:47 Page:137-141
ISSN:1068-3372
Container-title:Journal of Contemporary Physics (Armenian Academy of Sciences)
language:en
Short-container-title:J. Contemp. Phys.

Author:

Avjyan K. E.,Matevosyan L. A.,Mkrtchyan A. Yu.,Khachatryan A. M.

Publisher

Allerton Press

Subject

General Physics and Astronomy

Link

http://link.springer.com/content/pdf/10.3103/S1068337212030073.pdf

Reference8 articles.

1. Clark, A.H., Phys. Rev., 1967, vol. 154, p. 750.

2. Chopra, K.L. and Bahl, S.K., Phys. Rev. B, 1970, vol. 1, p. 2545.

3. Goh, E.S.M., Chen, T.P., et al., J. Appl. Phys., 2010, vol. 107, p. 02435; doi:10.1063/1.3291103.

4. Brodsky, M.H., Amorphous Semiconductors, Berlin, New York: Springer-Verlag, 1979.

5. Bityurin, Yu.A., Gaponov, S.V., et al., Sov. Electronnaja Promishlennost, 1981, vol. 5–6, p. 110.

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