Infrared quenching of photoconduction in silicon with multicharge manganese clusters-Reference-Cited by-同舟云学术

Infrared quenching of photoconduction in silicon with multicharge manganese clusters

Published:2013-07 Issue:4 Volume:49 Page:308-311
ISSN:1068-3755
Container-title:Surface Engineering and Applied Electrochemistry
language:en
Short-container-title:Surf. Engin. Appl.Electrochem.

Author:

Bachadyrchanov M. K.,Isamov S. B.,Zikrillaev N. F.,Arzikulov E. U.

Publisher

Allerton Press

Subject

Industrial and Manufacturing Engineering,Surfaces, Coatings and Films,Surfaces and Interfaces

Link

http://link.springer.com/content/pdf/10.3103/S1068375513040029.pdf

Reference18 articles.

1. Bube, R.H., Photoconductivity of Solids, New York: Wiley, 1960.

2. Kostishko, B.M., Nagornov, Yu.S., The mechanism of photoluminescence quenching in porous silicon by electron irradiation of various intensity, Tech. Phys. Lett., 2001, vol. 27, no. 10, pp. 827–829.

3. Batyrev, A.S., Batyrev, E.D., Bisengaliev, R.A, Novkov, B.V., and Anbushinov, V.S., Influence of infrared illumination on photocurrent spectra of CdS crystals, Fiz. Tverd. Tela, 1999, vol. 41, no. 7, pp. 1181–1184.

4. Pribylov, N.N., Rembeza, S.I., Spirin, A.I., and Buslov, V.A., Phoconductivity of gallium phosphide compensated by copper, Fiz. Tekh. Poluprovodn., 1998, vol. 32, no. 10, pp. 1165–1169.

5. Rose, A., Concepts in Photoconductivity and Allied Problems, New York: Interscience, 1963.

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