Temperature dependence of dark current-voltage characteristics of nInSb-nPbTe-nCdTe isotype structure-Reference-Cited by-同舟云学术

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Temperature dependence of dark current-voltage characteristics of nInSb-nPbTe-nCdTe isotype structure

Published:2008-05-07 Issue:3 Volume:43 Page:142-143
ISSN:1068-3372
Container-title:Journal of Contemporary Physics (Armenian Academy of Sciences)
language:en
Short-container-title:J. Contemp. Phys.

Author:

Avjyan K. E.,Vardanyan G. H.,Khachatryan A. M.

Publisher

Allerton Press

Subject

General Physics and Astronomy

Link

http://link.springer.com/content/pdf/10.3103/S1068337208030109.pdf

Reference6 articles.

1. Vardanyan, G.H., Vestnik MANEB, 2007, vol. 12, no. 2, p. 62.

2. Avjyan, K.E., Vardanyan, G.H., Grigoryan, R.P., and Khachatryan, A.M., J. Contemp. Phys. (Armenian Ac. Sci.), 2008, vol. 43, no.3, p. 139.

3. Bityurin, Yu.A., Gaponov, S.V., et al., Elektronnaya Promishlennost’, 1981, no. 5–6, p. 110.

4. Alexanyan, A.G. et al., Elektronnaya Promishlennost’, 1982, no. 1, p. 55.

5. Chrisey, D.B. and Hubler, G.K., Pulsed-Laser Deposition of Thin Films, New York: Wiley, 1994.

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