1. Bershadskaya, M.D., Avetikov, V.G., Nedel’ko, E.E., and Eroshev, V.K., Aluminum nitride as a new highly heat-conducting dielectric, Elektron. Tekh., Ser. 6: Mater., 1984, no. 6 (191), pp. 54–57.
2. Bershadskaya, M.D., Eroshev, V.K., Kuznetsova, I.G., and Nedel’ko, E.E., The advantages of nitride dielectrics in the manufacture of electronic products, Elektron. Prom-st., 1984, no. 5, pp. 72–78.
3. Tangen, I.-L., Yu, Yi., Grande, T., Mokkelbost, T., Hoier, R., and Einarsrud, M.-A., Preparation and characterization of aluminium nitride-silicon carbide composites, Ceram. Int., 2004, vol. 30, no. 6, pp. 931–938.
4. Strecker, K., Santos, C., Bondioli, M.J., and Hoffmann, M.-J., Microstructural variations in SiC ceramics sintered with AlN–Y2O3, Mater. Sci. Forum, 2006, vols. 530–531, pp. 532–537.
5. Shi, X.M., Yang, J.H., Pan, Y.B., and Guo, J.K., Microstructure and dielectric properties of heat-treated SiC–AlN multiphase ceramics, Key Eng. Mater., 2006, vol. 313, pp. 13–18.