A Fermi-Dirac Statistics Based Quantum Energy Transport Model for High Mobility MOSFETs
Author:
Affiliation:
1. Computer Assisted Science Division, Cybermedia Center, Osaka University
2. Department of Electronics, Kyoto Institute of Technology
Publisher
Japan Society for Simulation Technology
Subject
General Engineering
Reference27 articles.
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5. [5] P. Palestri, L. Lucci, S. Dei Tos, D. Esseni, L. Selmi: An improved empirical approach to introduce quantization effects in the transport direction in multi-subband Monte Carlo simulations, Semiconductor Science and Technology, 25:5 (2010), 1–10.
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1. A simulation study of short channel effects with a QET model based on Fermi–Dirac statistics and nonparabolicity for high-mobility MOSFETs;Journal of Computational Electronics;2015-10-07
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