TO THE QUESTION OF СHARGE TRANSPORT MECHANISM IN SILICON NITRIDE-BASED MEMRISTORS, "Электронная техника. Серия 3. Микроэлектроника"-Reference-Cited by-同舟云学术

TO THE QUESTION OF СHARGE TRANSPORT MECHANISM IN SILICON NITRIDE-BASED MEMRISTORS, "Электронная техника. Серия 3. Микроэлектроника"

Published:2022 Issue:4 Volume: Page:43-51
ISSN:2410-9932
Container-title:Электронная техника. Серия 3. Микроэлектроника
language:ru
Short-container-title:Электронная техника. Серия 3. Микроэлектроника

Author:

Makeev V.V.¹,Teplov G.S.¹,Sattarov P.Sh.¹

Affiliation:

1. MERI SC

Abstract

The results of the investigation of VAC and сharge transport mechanism in silicon nitride-based memristors are described. An attempt was made to explain the variation of characteristics and the complexity of modelling by the cluster structure of the functional layer based on non-stoichiometric nitride. Suggested that with real thicknesses of the functional layer in 4–8 nm, the homogeneity of its phase composition becomes of great importance. The presence of clusters commensurate with the film thickness and having a different chemical composition add an element of randomness to the results of VAC measurement and do not allow correctly calculating model parameters.

Publisher

Akademizdatcenter Nauka

Reference15 articles.

1. V.A. Gritsenko, D.R. Islamov “Physics of dielectric films: charge transport mechanisms and physical fundamentals of memory devices”, Publication of A.V. Rzhanov ICP, SB RAS, Novosibirsk, 2017.

2. R.A. Milovanov, E.A. Kelm “Structure of cells of non-volatile memory such as EEPROM and Flash”, Nano- and Microsystem Equipment. 2015. Vol. 4 (177). P. 45–59.

3. A. Petrov, L. Alekseeva, V. Luchinin, A. Romanov, T. Chikev, T. Nabatame “Towards a neuromorphic memristor computer platform”, Nanoindustry No. 1\63\2016.

4. Cheol Seong Hwang “Prospective of Semiconductor Memory Devices: from Memory System to Materials”, Advance Electron Materials, 2015, 1.

5. A. Yusupov, Kh. Sh. Saparov, A.E. Atamuratov “Memristor as the main element of the future artificial intelligence. Types and main characteristics (Review)” Successes of physical sciences 2020. Vol. 8, No. 4.