Author:
Matiyev A.Ch.,Uspazhiev R.T.
Abstract
The current-voltage and lux-ampere characteristics, as well as the photovoltage spectra and the lux dependence of the photovoltage in the gate and photodiode modes of the p-TlGaSe2 - p-CuInSe2 heterojunction obtained for the first time are studied. It was found that this heterostructure has a pronounced diode character. The I - V characteristic of the structure under study is characterized by the fact that at low voltages it obeys well the law I ~ exp (eU / βkT). The photovoltage spectrum covers a wide range of wavelengths (0.55 - 1.85 µm). In this case, pronounced maxima are observed at λ = 0.59 and λ = 0.95 μm. The relaxation time τ determined from the kinetics of the photo-voltage in the valve mode is ~ 20 μs.