Affiliation:
1. Yerevan State University
Abstract
A technology was developed for manufacturing solid-state semiconductor sensor sensitive to hydrogen peroxide vapors. Gas sensitive nanostructured films made of doped metal oxide SnO2<Co> were manufactured by the high-frequency magnetron sputtering method. The chemical composition of prepared SnO2<Co> targets was analyzed and the thickness of the deposited doped metal oxide film was measured. The morphology of the deposited Co-doped SnO2 film was studied by scanning electron microscopy. The gas sensing characteristics to the different concentrations of hydrogen peroxide vapors at various operating temperatures were also studied. The Co-doped SnO2 sensor showed enough sensitivity to very low concentration of hydrogen peroxide vapors (875 ppb) at the operating temperature of 100 °C. The SnO2<Co> based sensor can be successfully used in medical diagnostic apparatus for determining low concentration of hydrogen peroxide vapors in exhaled air.
Publisher
National Academy of Sciences of the Republic of Armenia