Influence of the Lanthanum Doping on the Gas Sensing Properties of the Magnetron Sputtered ZnO films for H2O2 Vapor Detection

Abstract

This study presents the fabrication of a high-performance hydrogen peroxide vapor sensor based on ZnO film doped with different concentration of La using the high-frequency magnetron sputtering method. The responses (Rgas/Rair) of the fabricated sensors were measured at various operating temperature to different concentrations of hydrogen peroxide vapors. Gas sensing tests indicate that the maximum sensitivity was observed for 2 at.% La concentration in ZnO material and sensor exhibit high sensitivity to low concentration of hydrogen peroxide vapor. We expect that in the future, ZnO doped with 2 at.% La sensitive films will be able to be utilized in highly sensitive, real-time hydrogen peroxide vapor sensors.