Stress State of GaN Epilayer Grown on Sapphire and 6H-SiC Substrates

Author:

Zhang Kexiong1,Liang Hongwei23,Song Shiwei1,Yang Dechao4,Shen Rensheng1,Liu Yang1,Xia Xiaochuan1,Luo Yingmin1,Du Guotong14

Affiliation:

1. School of Physics and Optoelectronic Engineering, Dalian Univ. of Technology, Dalian 116024, CN.

2. School of Physics and Optoelectronic Engineering, Dalian Univ. of Technology, Dalian 116024, CN

3. State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, 865 Changning Rd., Shanghai 200050, CN (Corresponding author), e-mail: hwliang@dlut.edu.cn

4. State Key Laboratory on Integrated Optoelectronics, School of Electronic Science and Engineering, Jilin Univ., Changchun 130012, CN.

Publisher

ASTM International

Subject

Mechanical Engineering,Mechanics of Materials,General Materials Science

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