Review of: "This device has less static leakage current than a MOSFET and is more resistant to SCEs"
Author:
Abstract
Publisher
Qeios Ltd
Link
https://www.qeios.com/read/93C55F/pdf
Reference13 articles.
1. Review of: "transistor nMOS (with ultra-low power consumption, energy-efficient computing, during the sub-threshold range)"
2. Review of: "FinFET nanotransistor downscaling causes more short channel effects, less gate control, exponential increase in leakage currents, drastic process changes and unmanageable power densities"
3. Review of: "Nanowires ( SiNWs) have high mobility and surface-to-volume ratio, which makes them easy to control using a weak electric field."
4. Review of: "Nanowires ( SiNWs) have high mobility and surface-to-volume ratio"
5. Review of: "Silicon nanowires SiNWs"
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