Review of: "The most outstanding feature of nMOS is the capacity to produce a reverse subthreshold swing (SS) of less than the 60 mV/decade thermal limit (at 300 K )"
Author:
Abstract
Publisher
Qeios Ltd
Link
https://www.qeios.com/read/RABEWG/pdf
Reference17 articles.
1. Review of: "The concept of (Nano assembler) in smart electronic nano structures"
2. Review of: "(nanotransistor) and the unique properties of graphene such as electron mobility and high thermal conductivity, resistance to fracture"
3. Review of: "Propagation of nano wire particles Nanowire"
4. Review of: "transistor nMOS (with ultra-low power consumption, energy-efficient computing, during the sub-threshold range)"
5. Review of: "FinFET nanotransistor downscaling causes more short channel effects, less gate control, exponential increase in leakage currents, drastic process changes and unmanageable power densities"
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