Review of: "High speed (doping) nMOS graphene transistor in p- and n-doping electronic circuits (positive and negative)"
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1. Review of: "Since the structure of carbon nanotubes has different values for the production and reproduction of nanotransistors at different temperatures, it is shown as a function of temperature in the form of T(λ)";Qeios;2024-08-28
2. Review of: "This increase in strength does not happen only in the range of a few nanometers, and the strength of materials of several tens or even hundreds of nanometers may be much more than the mass material of a large scale";Qeios;2024-08-28
3. Review of: "CNT carbon nanotubes can be large amounts transfer electric current, much more than graphene nanowires and nanoribbons generally self-aggregate in nanostructures, increasing nanoelectromagnetic interaction (nanoparticles) in conductive nanomaterials and semiconductors";Qeios;2024-08-28
4. Review of: "Nano-reactors are very diverse. Simple or complex, organic and inorganic materials with electrical conductivity, volume, and tissue cavity are used as nano-reactors";Qeios;2024-08-28
5. Review of: "The switching speed of this type is limited, for example, 1 KHz to 50 KHz, which is generally between two types of BJT and MOSFET";Qeios;2024-07-11