The Analysis Of Accuracy Of Selected Methods Of Measuring The Thermal Resistance Of IGBTs

Author:

Górecki Krzysztof,Górecki Paweł

Abstract

Abstract In the paper selected methods of measuring the thermal resistance of an IGBT (Insulated Gate Bipolar Transistor) are presented and the accuracy of these methods is analysed. The analysis of the measurement error is performed and operating conditions of the considered device, at which each measurement method assures the least measuring error, are pointed out. Theoretical considerations are illustrated with some results of measurements and calculations.

Publisher

Walter de Gruyter GmbH

Reference7 articles.

1. The pulse methods of the thermal parameters measurement in the Darlington Power transistor Metrol Meas;Górecki;Syst,2000

2. The semiconductor device thermal model taking into account non - linearity and multhipathing of the cooling system Journal of Physics;Górecki;Conference Series,2014

3. A Method of the Thermal Resistance Measurements of Semiconductor Devices with Junction;Zarębski;Measurement,2008

4. The electrothermal large - signal model of power MOS transistors for SPICE IEEE Transaction on Power;Zarębski;Electronics,2010

5. Reliability analysis and modeling of power MOSFETs in the PowerNet IEEE Transactions on Power;Castellazzi;Electronics,2006

Cited by 33 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献

同舟云学术

1.学者识别学者识别

2.学术分析学术分析

3.人才评估人才评估

"同舟云学术"是以全球学者为主线,采集、加工和组织学术论文而形成的新型学术文献查询和分析系统,可以对全球学者进行文献检索和人才价值评估。用户可以通过关注某些学科领域的顶尖人物而持续追踪该领域的学科进展和研究前沿。经过近期的数据扩容,当前同舟云学术共收录了国内外主流学术期刊6万余种,收集的期刊论文及会议论文总量共计约1.5亿篇,并以每天添加12000余篇中外论文的速度递增。我们也可以为用户提供个性化、定制化的学者数据。欢迎来电咨询!咨询电话:010-8811{复制后删除}0370

www.globalauthorid.com

TOP

Copyright © 2019-2024 北京同舟云网络信息技术有限公司
京公网安备11010802033243号  京ICP备18003416号-3