Multifractal characterization of epitaxial silicon carbide on silicon-Reference-Cited by-同舟云学术

Multifractal characterization of epitaxial silicon carbide on silicon

Published:2017-10-20 Issue:3 Volume:35 Page:539-547
ISSN:2083-134X
Container-title:Materials Science-Poland
language:en
Short-container-title:

Author:

Ţălu Ştefan¹,Stach Sebastian²,Ramazanov Shikhgasan³⁴,Sobola Dinara⁵,Ramazanov Guseyn⁴

Affiliation:

1. Technical University of Cluj-Napoca, Faculty of Mechanical Engineering, Department of AET, Discipline of Descriptive Geometry and Engineering Graphics, 103-105 B-dul Muncii St., Cluj-Napoca 400641, Cluj, Romania

2. University of Silesia, Faculty of Computer Science and Materials Science, Institute of Informatics, Department of Biomedical Computer Systems, ul. B˛edzi´nska 39, 41-205 Sosnowiec , Poland

3. SICLAB Limited liability company, 367030 Makhachkala, M. Yaragskogo 75, Dagestan Republic, Russian Federation

4. Dagestan State University, Faculty of Physics, 367015 Makhachkala , M. Gadjieva 43-a, Dagestan Republic, Russian Federation

5. Brno University of Technology, Faculty of Electrical Engineering and Communication, Physics Department, Technická 8, 616 00 Brno , Czech Republic

Abstract

Abstract The purpose of this study was to investigate the topography of silicon carbide films at two steps of growth. The topography was measured by atomic force microscopy. The data were processed for extraction of information about surface condition and changes in topography during the films growth. Multifractal geometry was used to characterize three-dimensional micro- and nano-size features of the surface. X-ray measurements and Raman spectroscopy were performed for analysis of the films composition. Two steps of morphology evolution during the growth were analyzed by multifractal analysis. The results contribute to the fabrication of silicon carbide large area substrates for micro- and nanoelectronic applications.

Publisher

Walter de Gruyter GmbH

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

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