Investigation of dielectric properties of heterostructures based on ZnO structures
Author:
Selçuk A.H.1, Orhan E.2, Ocak S. Bilge3, Selçuk A.B.4, Gökmen U.3
Affiliation:
1. Balıkesir University, Faculty of Engineering Department of Electric and Electronic Engineering, 10145, Balıkesir , Turkey 2. Gazi University, Faculty of Science, Department of Physics, 06500 Ankara , Turkey 3. Gazi University, Graduate School of Natural and Applied Science, Department of Advanced Technology, 06500 Ankara , Turkey 4. İzmir Democracy University, Faculty of Engineering, Department of Biomedical Engineering, 35140 İzmir , Turkey
Abstract
Abstract
The voltage and frequency dependence of dielectric constant є′, dielectric loss є″, electrical modulus M″, M′, loss tangent tanδ and AC electrical conductivity σAC of p-Si/ZnO/PMMA/Al, p-Si/ZnO/Al and p-Si/PMMA/Al structures have been investigated by means of experimental G-V and C-V measurements at 30 kHz, 100kHz, 500 kHz and 1 MHz in this work. While the values of є′, є″, tanδ and σAC decreased, the values of M′ and M″ increased for these structures when frequency was increased and those of p-Si/ZnO/Al and p-Si/PMMA/Al were comparable with those of p-Si/ZnO/PMMA/Al. The obtained results showed that the values of p-Si/ZnO/PMMA/Al structure were lower than the values of p-Si/ZnO/Al and p-Si/PMMA/Al.
Publisher
Walter de Gruyter GmbH
Subject
Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science
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