Affiliation:
1. Dipartimento di Matematica e Informatica Università degli Studi di Catania , Italy
Abstract
Abstract
The electro-thermal transport in silicon carbide semiconductors can be described by an extended hydrodynamic model, obtained by taking moments from kinetic equations, and using the Maximum Entropy Principle. By performing appropriate scaling, one can obtain reduced transport models such as the Energy transport and the drift-diffusion ones, where the transport coefficients are explicitly determined.
Subject
Applied Mathematics,Industrial and Manufacturing Engineering
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