Design Considerations for Gan-Based Microinverter for Energy Storage Integration Into Ac Grid

Author:

Kroics K.12,Zakis J.2,Suzdalenko A.2,Husev O.2

Affiliation:

1. Institute of Physical Energetics 11 Krivu Str., Riga , LV-1006, LATVIA

2. Riga Technical University 1 Kalku Str., Riga , LV-1658, LATVIA

Abstract

Abstract A full bridge converter with electrolytic capacitor on the dc bus is a widely used approach for a single phase interface for renewable energy source generation or energy storage integration in the utility grid. New wide bandgap devices enable higher switching frequency, higher efficiency and higher power density. In the paper, the authors introduce the challenges associated with an increase in switching frequency of a single phase inverter and implementation of wide bandgap GaN-based transistors instead of traditional Si-based transistors. The low gate threshold voltage of GaN transistor and unique reverse conduction behaviour require different driving circuit. The design of the driver circuit and other practical issues are analysed in the paper. The paper also presents some practical results. The research results can be useful to avoid mistakes by designing GaN-based power converters as these devices become increasingly interesting for commercial applications.

Publisher

Walter de Gruyter GmbH

Subject

General Physics and Astronomy,General Engineering

Reference18 articles.

1. 1. Jones, E. A., Wang F. F., & Costinett, D. (2016). Review of Commercial GaN Power Devices and GaN-Based Converter Design Challenges. IEEE Journal of Emerging and Selected Topics in Power Electronics, 4(3), 707-719.

2. 2. Bortis, D., Knecht, O., Neumayr, D., & Kolar, J. W. (2016). Comprehensive evaluation of GaN GIT in low- and high-frequency bridge leg applications. In IEEE 8th International Power Electronics and Motion Control Conference, 22-25 May 2016 (pp. 21-30). Hefei, China.

3. 3. Rise of the 3rd Generation Semiconductor Silicon Carbide Technology. [Online]. Available at http://www.iabrasive.com/articles/rise-of-the-3rd-generation-semiconductor-silicon-carbide-technology. [Accessed: 04-Aug-2017].

4. 4. Roschatt, P. M., McMahon, R. A., & Pickering, S. (2015). Investigation of dead-time behaviour in GaN DC-DC buck converter with a negative gate voltage. In 9th International Conference on Power Electronics and ECCE Asia, 1-5 June 2015 (pp. 1047-1052). Seoul, Korea.

5. 5. Sørensen, C., Lindblad Fogsgaard, M., Christiansen, M. N., Kjeldal Graungaard, M., Nørgaard, J. B., Uhrenfeldt, C., & Trintis, I. (2015). Conduction, reverse conduction and switching characteristics of GaN E-HEMT. In 2015 IEEE 6th International Symposium on Power Electronics for Distributed Generation Systems (PEDG), 22 -25 June 2015 (pp. 1-7). Aachen, Germany: IEEE Press.

Cited by 3 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献

1. Application of Calorimetric Technique for Wide Bandgap Transistor Loss Assessment;2020 2nd Global Power, Energy and Communication Conference (GPECOM);2020-10-20

2. Feasibility Study of Interleaving Approach for Quasi-Z-Source Inverter;Electronics;2020-02-06

3. High frequency two-plate capacitive wireless power transfer system;Engineering for Rural Development;2018-05-23

同舟云学术

1.学者识别学者识别

2.学术分析学术分析

3.人才评估人才评估

"同舟云学术"是以全球学者为主线,采集、加工和组织学术论文而形成的新型学术文献查询和分析系统,可以对全球学者进行文献检索和人才价值评估。用户可以通过关注某些学科领域的顶尖人物而持续追踪该领域的学科进展和研究前沿。经过近期的数据扩容,当前同舟云学术共收录了国内外主流学术期刊6万余种,收集的期刊论文及会议论文总量共计约1.5亿篇,并以每天添加12000余篇中外论文的速度递增。我们也可以为用户提供个性化、定制化的学者数据。欢迎来电咨询!咨询电话:010-8811{复制后删除}0370

www.globalauthorid.com

TOP

Copyright © 2019-2024 北京同舟云网络信息技术有限公司
京公网安备11010802033243号  京ICP备18003416号-3