Affiliation:
1. Center of Ecological Collaborative Innovation for Aluminum Industry in Guangxi, Guangxi Key Laboratory of Processing for Non-ferrous Metal and Featured Materials, School of Resources, Environment and Materials, Guangxi University , Nanning 530004 , China
Abstract
Abstract
Photon-enhanced thermionic emission (PETE) is a new type of solar cell. The existing papers on PETE research do not consider the structure of actual PETE devices; in practical PETE structure, the original incident light intensity is attenuated by the window layer and the buffer layer (include anode in reflection PETE devices). In this paper, according to two kinds of the common structure of PETE device, the influence of transmission and reflection of sunlight on the conversion efficiency of PETE device is analyzed. Using a light-trapping structure on the cathode of the PETE device is a valid method to reduce the reflection of the incident light. The calculation results show that the optical attenuation has a great influence on the actual photon flux received by the cathode effective layer. Under the condition of reasonable operation of the device, the efficiency of PETE can be improved by reducing the size of the material, improving the light transmittance of the buffer layer and window layer, and using the light-trapping structure.
Subject
General Physics and Astronomy
Reference18 articles.
1. Bambawale MJ, Sovacool BK. China’s energy security: the perspective of energy users. Appl Energy. 2011;88(5):1949–56.
2. Fang X, Li D. Solar photovoltaic and thermal technology and applications in China review article. Renew Sustain Energy Rev. 2013;23:330–40.
3. Schwede JW, Bargatin I, Riley DC, Hardin BE, Rosenthal SJ, Sun Y, et al. Photon-enhanced thermionic emission for solar concentrator systems. Nat Mater. 2010;9:762–7.
4. Acikkalp E, Kandemir SY. Performance assessment of the photon enhanced thermionic emitter and heat engine system. J Therm Anal Calorim. 2020.
5. Shourong X, Qingcheng Z, Yonghong G, Liming X. Experimental investigation on the properties of reflecting power on GaAs surface changing with the temperature. J Trans Technol. 1996;6.
Cited by
1 articles.
订阅此论文施引文献
订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献