Einfluß der Gasadsorption auf die Epitaxie dünner Metallschichten

Abstract

Special effects of gasadsorption on epitaxy were discussed in previous papers 1. In the present publication the influence of the adsorbed vapours on the epitaxial growth of fcc-metals on alkalihalides has been investigated in more detail. The results of the experiments demonstrate that the orientations of metal films are strongly influenced by the physical properties of the vapours the substrats are cleaved in. The thickness of the adsorbed layer is controlled by the dipole moment and the partial pressure of the vapours and additionnally by the substrat temperature and the deposition rate of the evaporated metal. Since the orientation of the metal films depends itself on the vapour covering of the cleavage planes, the orientation is also determined by these four quantities.