Study of the spatial distribution of minority carrier diffusion length in epiplanar detector structures-Reference-Cited by-同舟云学术

Study of the spatial distribution of minority carrier diffusion length in epiplanar detector structures

Published:2015-01-01 Issue:4 Volume:23 Page:
ISSN:1896-3757
Container-title:Opto-Electronics Review
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Author:

Piotrowski T.,Węgrzecki M.,Stolarski M.,Krajewski T.

Abstract

AbstractOne of the key parameters determining detection properties of silicon PIN detector structures (pThe paper presents a method for measuring the spatial distribution of effective carrier diffusion length in silicon detector structures, based on the measurement of photoelectric current of a non-polarised structure illuminated (spot diameter of 250 μm) with monochromatic radiation of two wavelengths λ

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Radiation,General Materials Science

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