Influence of Loading, Regeneration and Recalling Elements Processes on the System Behavior of All Optical Data Bus Line System Random Access Memory

Author:

Amiri I. S.12,Rashed Ahmed Nabih Zaki3,Mohammed Abd El-Naser A.3,Fawzy Zaky Walid3

Affiliation:

1. Computational Optics Research Group, Advanced Institute of Materials Science , Ton Duc Thang University , Ho Chi Minh City , Vietnam

2. Faculty of Applied Sciences , Ton Duc Thang University , Ho Chi Minh City , Vietnam

3. Electronics and Electrical Communications Engineering Department, Faculty of Electronic Engineering , Menoufia University , Menouf 32951 , Menoufia , Egypt

Abstract

Abstract The most powerful computer is in a very big need for a reliable random access memory (RAM) which can buffer digital data in. All optical RAM design is introduced in three phases. Those are the loading process phase which describes how data will be entering the closed trap from the line bus. The regeneration process phase which describes how data trapped are regenerated to not to lose its power or get a distortion. As well as the recalling process which describes how trapped data be handled to the line bus is also introduced.

Publisher

Walter de Gruyter GmbH

Subject

Electrical and Electronic Engineering,Condensed Matter Physics,Atomic and Molecular Physics, and Optics

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