Simulation of doubly stochastic Poisson point processes and application to nucleation of nanocrystals and evaluation of exciton fluxes-Reference-Cited by-同舟云学术

Simulation of doubly stochastic Poisson point processes and application to nucleation of nanocrystals and evaluation of exciton fluxes

Published:2024-08-23 Issue:3 Volume:30 Page:315-330
ISSN:0929-9629
Container-title:Monte Carlo Methods and Applications
language:en
Short-container-title:

Author:

Sabelfeld Karl K.¹^ORCID,Glazkov Stepan¹

Affiliation:

1. Institute of Computational Mathematics and Mathematical Geophysics , Russian Academy of Sciences , Novosibirsk , Russia

Abstract

Abstract In this study we solve the following problem: Simulate random 2D Poisson point processes with a desired correlation function. To solve this problem we suggest the following algorithm: (1) simulate a positive valued random process with the desired correlation function, (2) use this process as an intensity of the doubly stochastic Poisson random point process. We apply this algorithm to simulate random distribution of nanocrystals on a plane. Then we apply the developed methods to calculate excitonic fluxes to the family of generated nanocrystals.

Funder

Russian Science Foundation

Publisher

Walter de Gruyter GmbH

Link

https://www.degruyter.com/document/doi/10.1515/mcma-2024-2014/pdf

Reference12 articles.

1. S. Basu and A. Dassios, A Cox process with log-normal intensity, Insurance Math. Econom. 31 (2002), no. 2, 297–302.

2. Y. Chen, Thinning algorithms for simulating point processes, Talk, Florida State University, Tallahassee, 2016.

3. D. R. Cox and V. Isham, Point Processes, Monogr. Appl. Probab. Statist., Chapman & Hall, London, 1980.

4. L. Devroye, The series method for random variate generation and its application to the Kolmogorov–Smirnov distribution, Amer. J. Math. Manag. Sci. 1 (1981), no. 4, 359–379.

5. F. Feix, T. Flissikowski, K. K. Sabelfeld, V. M. Kaganer, M. Wölz, L. Geelhaar, H. T. Grahn and O. Brandt, Ga-polar (In, Ga)N/GaN quantum wells versus N-polar (In, Ga) N quantum disks in GaN nanowires: A comparative analysis of carrier recombination, diffusion, and radiative efficiency, Phys. Rev. Appl. 8 (2017), Article ID 014032.