Silicon-Germanium Dioxide and Aluminum Indium Gallium Arsenide-Based Acoustic Optic Modulators-Reference-Cited by-同舟云学术

Silicon-Germanium Dioxide and Aluminum Indium Gallium Arsenide-Based Acoustic Optic Modulators

Published:2020-06-10 Issue:1 Volume:10 Page:506-511
ISSN:2391-5439
Container-title:Open Engineering
language:
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Author:

El-Hageen Hazem M.¹²,Alatwi Aadel M.¹,Rashed Ahmed Nabih Zaki³

Affiliation:

1. Electrical Engineering Department, Faculty of Engineering, University of Tabuk, Tabuk, Saudi Arabia

2. Egyptian Nuclear & Radiological Regulatory Authority, Cairo, Egypt

3. Electronics and Electrical Communications Engineering Department, Faculty of Electronic Engineering, Menouf32951, Menoufia University, Egypt

Abstract

AbstractThe purpose of this study was to clarify the silicon-germanium dioxide (SiGeO2) and Aluminum Indium Gallium Arsenide (AlInGaAs) based acoustic optic modulators for upgrading transmission performance characteristics. The transient time response of these modulators is analyzed and discussed in detail. The 3-dB modulation signal bandwidth, diffraction signal efficiency, signal rise time, and signal quality factor with minimum data error rates are also considered. The proposed models with silicon-germanium dioxide and Aluminum Indium Gallium Arsenide acoustic optic modulators were compared to the previous model with silicon acoustic optic modulators. The results confirmed the high-performance efficiency of the proposed models when compared to the previous model, in both the lowest transient time response and the highest acoustic optic modulators speed response.

Publisher

Walter de Gruyter GmbH

Subject

Electrical and Electronic Engineering,Mechanical Engineering,Aerospace Engineering,General Materials Science,Civil and Structural Engineering,Environmental Engineering

Link

https://www.degruyter.com/document/doi/10.1515/eng-2020-0065/pdf

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