Electric measurements of PV heterojunction structures a-SiC/c-Si-Reference-Cited by-同舟云学术

Electric measurements of PV heterojunction structures a-SiC/c-Si

Published:2018-01-01 Issue:1 Volume:69 Page:52-57
ISSN:1339-309X
Container-title:Journal of Electrical Engineering
language:en
Short-container-title:

Author:

Perný Milan¹,Šály Vladimír¹,Janíček František¹,Mikolášek Miroslav¹,Váry Michal¹,Huran Jozef²

Affiliation:

1. Faculty of Electrical Engineering and Information Technologies , Slovak University of Technology , Ilkovičova 3, 812 19 Bratislava , Slovakia

2. Slovak Academy of Sciences, Institute of Electrical Engineering , Dúbravská cesta 9, 841 04 Bratislava , Slovakia

Abstract

Abstract Due to the particular advantages of amorphous silicon or its alloys with carbon in comparison to conventional crystalline materials makes such a material still interesting for study. The amorphous silicon carbide may be used in a number of micro-mechanical and micro-electronics applications and also for photovoltaic energy conversion devices. Boron doped thin layers of amorphous silicon carbide, presented in this paper, were prepared due to the optimization process for preparation of heterojunction solar cell structure. DC and AC measurement and subsequent evaluation were carried out in order to comprehensively assess the electrical transport processes in the prepared a-SiC/c-Si structures. We have investigated the influence of methane content in deposition gas mixture and different electrode configuration.

Publisher

Walter de Gruyter GmbH

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