Physico-chemical and optical properties of Er3+-doped and Er3+/Yb3+-co-doped Ge25Ga9.5Sb0.5S65 chalcogenide glass

Author:

Himics Dianna1,Strizik Lukas1,Holubova Jana1,Benes Ludvik1,Palka Karel1,Frumarova Bozena2,Oswald Jiri3,Tverjanovich Andrey S.4,Wagner Tomas1

Affiliation:

1. Department of General and Inorganic Chemistry, Faculty of Chemical Technology, University of Pardubice, Studentska 573, 53210 Pardubice, Czech Republic

2. Institute of Macromolecular Chemistry of Czech Academy of Sciences, v.v.i., Heyrovskeho nam. 2, 162 06 Prague, Czech Republic

3. Institute of Physics of the ASCR, v.v.i., CUKrovarnicka 10, 16200 Prague, Czech Republic

4. Department of Laser Chemistry and Laser Material Science, Saint Petersburg State University, Universitetskii pr. 26, 198504 Saint Petersburg, Russia

Abstract

AbstractWe investigated the physicochemicаl properties, structure and optical properties of the Ge25Ga9.5Sb0.5S65: Er3+/Yb3+ glasses. The Judd-Ofelt theory was used to calculate the intensities of the intra-4f electronic transitions of Er3+ ions. We observed the upconversion photoluminescence (UCPL) at 530, 550, 660 and 810 nm under 980 nm excitation. In the Ge25Ga9.5Sb0.5S65: 0.1 at.% Er3+, we found that the Stokes photoluminescence (PL) at the green spectral region excited by the 490 and 532 nm laser is only ≈5 times higher than the UCPL emission under 810 or 980 nm excitation making these materials attractive for UCPL applications. The addition of 0.1–1 at.% of Yb3+ into Ge25Ga9.5Sb0.5S65: 0.1 at.% Er3+ glass reduces the UCPL as well as the Er3+ ≈1.5 μm emission intensity probably due to the reabsorption processes of the excitation light and concentration quenching. However, the observed Er3+: 4S3/24I13/2 (≈850 nm) emission in the Ge25Ga9.5Sb0.5S65: 0.1 at.% Er3+ sample populates the 4I13/2 level, which promises the using of this material for the 1.5 μm optical amplification.

Publisher

Walter de Gruyter GmbH

Subject

General Chemical Engineering,General Chemistry

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